ISSN : 1229-6783(Print)
ISSN : 2288-1484(Online)
ISSN : 2288-1484(Online)
Journal of the Korea Safety Management & Science Vol.17 No.3 pp.355-362
DOI : https://doi.org/10.12812/ksms.2015.17.3.355
DOI : https://doi.org/10.12812/ksms.2015.17.3.355
The Develop and Research of EPD system for the semiconductor fine pattern etching
Abstract
There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.
반도체 미세 패턴 식각을 위한 EPD 시스템 개발 및 연구
초록
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